This book presents the art of advanced MOSFET modeling for integrated circuit simulation and design. It provides the essential mathematical. BSIM and IC simulation. Circuit simulation and compact models. BSIM – the beginning. BSIM3 – a compact model based on new MOSFET physics. : BSIM4 and MOSFET Modeling for IC Simulation (International Series on Advanced in Solid State Electronics and Technology).
|Published (Last):||10 October 2008|
|PDF File Size:||18.50 Mb|
|ePub File Size:||12.28 Mb|
|Price:||Free* [*Free Regsitration Required]|
Nielsen Book Data Fringing and overlap capacitances. Saturation junction leakage current and zero-bias capacitance models. Gate direct-tunneling current theory and model.
Review of the charge-deficit transient NQS model. Diode temperature-dependence model . Find it at other libraries via WorldCat Limited preview. Source and drain contact scenarios and diffusion resistances. Responsibility Weidong Liu, Chenming Hu.
BSIM4 channel thermal noise models. Skip to search Skip to main content.
Time discretization, equation linearization and matrix stamping. Available to subscribing institutions. BSIM4 – aimed for nm down to 20nm nodes. Series International series mosfeg advances in solid state electronics and technology.
ISBN electronic bk. Bibliography Includes bibliographical references and index.
BSIM4 and MOSFET Modeling For IC Simulation
Charge and capacitance models. Intrinsic charge and capacitance models. Source and drain of a transistor with multiple gate fingers.
The intent of this book ch. Velocity saturation and velocity overshoot. Non-quasi-static and parasitic gate and body resistances. Source and drain area and perimeter mosfeh.
Channel DC current and output resistance. Publication date Series International mosfte on advances in solid state electronics and technology Reproduction Electronic reproduction. It provides the essential mathematical and physical analyses of all the electrical, mechanical and thermal effects in MOS transistors relevant to the operation of integrated circuits.
BSIM4 and MOSFET modeling for IC simulation – CERN Document Server
Output resistance in saturation region. World Scientific Publishing Co. Gate direct-tunneling and body currents. Gate and channel geometries and materials. Single continuous channel charge model. BSIM4 diode charge and capacitance . Junction diode IV and CV models. BSIM – the beginning.
Connections of a multi-transistor stack. Anr representations and parameters.
Channel current in subthreshold and linear operations. Special attention is paid to MOSFET characterization and model parameter extraction methodologies, making the book particularly useful for those interested or already engaged in work in the areas of semiconductor devices, compact modeling for SPICE simulation, and integrated circuit design.
Introduction and chapter objectives.